Browsing by Author ABRAMO, Antonio


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Issue DateTitleAuthor(s)Fulltext accessRepository
2002Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETsABRAMO, Antonio ; DALLA SERRA, Alberto ; PALESTRI, Pierpaolo ; SELMI, Luca ; SANGIORGI, Enrico Restricted AccessAir (UniUD)
1998Analysis of quantum effects in non-uniformly doped MOS structureABRAMO, Antonio Restricted AccessAir (UniUD)
2002Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETsSELMI, Luca ; ABRAMO, Antonio Restricted AccessAir (UniUD)
2001Analytical and Numerical Study of the Impact of HALOs on Short Channel and Hot Carrier Effects in Scaled MOSFETsZANCHETTA, SERGIO ; SANGIORGI, Enrico ; ABRAMO, Antonio ; SELMI, Luca Restricted AccessAir (UniUD)
1998Application of the Wigner-function formulation to mesoscopic systems in presence of the electron- phonon interactionABRAMO, Antonio Restricted AccessAir (UniUD)
2003Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo ToolESSENI, David ; ABRAMO, Antonio ; PALESTRI, Pierpaolo ; SELMI, Luca Restricted AccessAir (UniUD)
2001Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETsABRAMO, Antonio ; SELMI, Luca ; DALLA SERRA, Alberto ; PALESTRI, Pierpaolo Restricted AccessAir (UniUD)
2001Closed- and open-boundary models for gate-current calculation in MOS devicesABRAMO, Antonio ; SELMI, Luca ; PALESTRI, Pierpaolo Restricted AccessAir (UniUD)
1994A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structuresABRAMO, Antonio ; SANGIORGI, Enrico ; SELMI, Luca Restricted AccessAir (UniUD)
2002A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS CapacitorsSANGIORGI, Enrico ; ABRAMO, Antonio ; DALLA SERRA, Alberto ; PALESTRI, Pierpaolo ; SELMI, Luca Restricted AccessAir (UniUD)
2000A comparison between semi-classical and quantum-mechanical escape-times for gate current calculationsSELMI, Luca ; PALESTRI, Pierpaolo ; ABRAMO, Antonio Restricted AccessAir (UniUD)
1994A comparison of numerical solutions of the Boltzmann Transport Equation for high energy electron transport siliconABRAMO, Antonio Restricted AccessAir (UniUD)
2008The correspondence between deterministic and stochastic digital neurons: analysis and methodologyABRAMO, Antonio Restricted AccessAir (UniUD)
2011Deformation detection in Structural Health Monitoring”ABRAMO, Antonio Restricted AccessAir (UniUD)
2001Density of states of a two-dimensional electron gas at semiconductor surfacesABRAMO, Antonio Restricted AccessAir (UniUD)
1999Density of states of a two-dimensional electron gas measured by high resolution photoelectron spectroscopyABRAMO, Antonio Restricted AccessAir (UniUD)
2003Device simulation for decananometer MOSFETsESSENI, David ; SELMI, Luca ; ABRAMO, Antonio ; PALESTRI, Pierpaolo ; SANGIORGI, Enrico Restricted AccessAir (UniUD)
1992Device simulation of small silicon MOSFET's using the Monte Carlo methodABRAMO, Antonio Restricted AccessAir (UniUD)
2010Distributed multi-level hierarchic strategy for broadcast collaborative mobile networksABRAMO, Antonio Restricted AccessAir (UniUD)
1993An efficient impact ionization model for silicon Monte Carlo simulationABRAMO, Antonio Restricted AccessAir (UniUD)